-
Targeted materials: any type of semiconductor-based light-emitting material systems.
EpiEL mapping system has been
extensively tested on nitride-based material systems. We offer
sample test with no charge on other materials.
-
Wafer size: standard for 2-, 3-, 4- inches wafers; up to 12-
inches can be customized (might need longer lead time).
-
Stage motion control: accuracy<16 um,
step resolution <0.5 um.
-
Light detection: standard for transmission mode; reflection
mode will be optional (for samples with opaque substrates).
-
Probe type: Type I and Type II.
-
Probe Station: Lab- or Production- version
-
Scanning speed: about 10-20 minutes per 100 sampling points.
-
Sampling points: number of sampling points and
optical/electrical measurements for each point can be specified by
end user.
-
Test mode: quick EL or EL mapping.
-
Type of mappings*: slope efficiency, peak/dominant wavelength (WLP/WLD), FWHM, EL emissive
intensity, current/voltage at given voltage/current, emissive
intensity at given driving current or specific wavelength, turn-on voltage, etc
(corresponding software can be customized for special requirement of
customers).
-
Type of curves*: EL spectra at specific
current/voltage, current or emissive intensity vs. voltage (LIV), output
intensity vs. driving current, peak/dominant wavelength (WLP/WLD) & FWHM vs. driving
current, etc.
-
Mapping color encoding: rainbow, gradient,
binary, temperature, gray, or any type specified by end user.
-
Wavelength detection: UV/VIS or VIS/IR, or customized.
-
Current measurement: standard >10e-6A,
optional >10e-12A.
-
Options: PL characterization (for EpiEL-300),
enhanced electrical characterization (for EpiEL-500), duo-EL-detection (for EpiEL-700), Reverse leakage,
LD
