method to control the
Barrier Inhomogeneities in 4H-SiC Schottky Rectifiers
Currently SiC-based PN and Schottky
junctions are still suffering fundamental device problems which can
be briefed as forward-voltage degradation and Schottky barrier
height (SBH) inhomogeneities respectively. SiC Schottky diodes with
inhomogeneous barriers usually have excess reverse leakage current
and excess forward current only at small on-state bias. One
frustrating conclusion from previous researches is that none of the
known defects could be claimed as the main factor controlling SBH
MaxMile Technologies has recently demonstrated a method which can be
used to control the Schottky barrier inhomogeneities in SiC
experimental results indicated that the inhomogeneities could be
precisely controlled, completely eliminated and exactly duplicated.
This research reflects MaxMile's profound understanding of
the correlation between defects & device performances in SiC
material and device development and will be further used for
developing device-favored SiC epitaxy.
For more information, please visit:
Investigation on Barrier Inhomogeneities in 4H-SiC Schottky
Rectifiers, physica status solidi (a), Vol.203, 2006:
inhomogeneities in SiC Schottky contacts.