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Journal
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Inhomogeneities in Ni/4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states
, Journal of Applied Physics,
Vol.101, 2007: 114514.
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Superscrew Dislocations in Silicon Carbide: Dissociation,
Aggregation and Formation, Journal of Applied Physics,
Vol.99, 2006: 063513.
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A Method to Determine Superscrew Dislocation Structure in Silicon
Carbide, Material Science and Engineering B, Vol. 129,
2006: 216-221.
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Investigation on Barrier Inhomogeneities in 4H-SiC Schottky
Rectifiers, physica status solidi (a), Vol.203, 2006:
643-650.
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Defect Driven Inhomogeneities in Ni/4H-SiC Schottky Barriers,
Applied Physics Letters, Vol.87, 2005: 242106.
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Investigation on small growth pits in 4H silicon carbide epilayers,
Journal of Crystal Growth,
Vol. 279, 2005: 425-432.
Conference
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EpiEL Provides Advanced Optical Characterization for Nitride LED Epi-wafers,
ICNS-7, Las Vegas, Nevada, USA, September 16-21, 2007.
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EpiEL: Electroluminescence directly on LED epi-wafers,
SPIE-OEA 2007, San Diego, California, USA, August 26-30, 2007.
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The
Impact of Surface Defects on SiC Schottky and Ohmic Contact
Formation, ISDRS 2005, Bethesda, Maryland, December 7-9, 2005
(coauthored by).
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A Study of Inhomogeneous Schottky diodes on n-type 4H-SiC,
ICSCRM2005, Pittsburgh, PA, September 18-23, 2005 (coauthored by).
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Nondestructive Defect Characterization and Its Applications in SiC
Material and Device Development, 77th S.C.
Academy of Science Meetings, Winthrop University, March 16, 2005.
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